[M-4] Group IV Materials II

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room M (431, Bldg. 4)

Session Chairs: Akira Heya (Univ. of Hyogo), Taizoh Sadoh (Kyushu Univ.)

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10:45 AM - 11:00 AM

[M-4-01] Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

^○Yuji Yamamoto¹, Wei-Chen Wen¹, Markus Andreas Schubert¹, Agnieszka Anna Anna Corley-Wiciak¹, Sho Sugawa², Yuta Ito², Ryo Yokogawa², Atsushi Ogura², Bernd Tillack^1,3 (1. IHP - Leibniz-Institut für innovative Mikroelektronik (Germany), 2. School of Sci. and Tech., Meiji Univ. (Japan), 3. Technische Universität Berlin (Germany))

11:00 AM - 11:15 AM

[M-4-02] High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

^○MOHD FAIZ BIN AMIN¹, Jose A. Piedra-Lorenzana¹, Keisuke Yamane¹, Takeshi Hizawa¹, Tetsuya Nakai², Yasuhiko Ishikawa¹ (1. Toyohashi Univ. of Tech. (Japan), 2. SUMCO Corp. (Japan))

11:15 AM - 11:30 AM

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge ₁₋ _xSn _x layers on Si(001) substrates toward in-plane strain control

^○Tatsuma Hiraide¹, Masashi Kurosawa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹ (1. Nagoya Univ. (Japan))

11:30 AM - 11:45 AM

[M-4-04] Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition

^○Kenta Moto¹, Kaoru Toko², Tomonari Takayama¹, Takamitsu Ishiyama², Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. Univ. of Tsukuba (Japan))

11:45 AM - 12:00 PM

[M-4-05] Giant thermoelectric power of n-type Si ₁₋ _xSn _x layers grown on FZ-Si(001) substrates

^○Tatsuki Oiwa¹, Shigehisa Shibayama¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Takayoshi Katase², Masashi Kurosawa¹ (1. Nagoya Univ. (Japan), 2. Tokyo Tech. (Japan))

Session information

[M-4] Group IV Materials II

[M-4-01] Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

[M-4-02] High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge ₁₋ _xSn _x layers on Si(001) substrates toward in-plane strain control

[M-4-04] Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition

[M-4-05] Giant thermoelectric power of n-type Si ₁₋ _xSn _x layers grown on FZ-Si(001) substrates

Authentication

Session information

[M-4] Group IV Materials II

[M-4-01] Thin and Locally Dislocation-Free SiGe Virtual Substrate Fabrication by Lateral Selective Epitaxy

[M-4-02] High-Quality Ge Epitaxial Film Based on Dislocation Trapping Mechanism in Patterned Si Substrate

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge 1− xSn x layers on Si(001) substrates toward in-plane strain control

[M-4-04] Various Metal Contacts on Polycrystalline Ge with Amorphous Interlayer Formed by ZrN Sputter-Deposition

[M-4-05] Giant thermoelectric power of n-type Si 1− xSn x layers grown on FZ-Si(001) substrates

Authentication

[M-4-03] Seed-layer driven solid phase epitaxy of amorphous Ge ₁₋ _xSn _x layers on Si(001) substrates toward in-plane strain control

[M-4-05] Giant thermoelectric power of n-type Si ₁₋ _xSn _x layers grown on FZ-Si(001) substrates