[M-7] Advanced Materials, Nanofabrication, and Thin Films III

Fri. Sep 8, 2023 1:30 PM - 3:15 PM Room M (431, Bldg. 4)

Session Chairs: Akihiko Kikuchi (Sophia Univ.), Kentaro Watanabe (Shinshu Univ.)

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1:30 PM - 1:45 PM

[M-7-01] Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation

^○Tomoya Nagahashi^1,2, Hajime Karasawa², Ryota Horiike², Kenji Shiraishi^1,3 (1. Nagoya Univ. (Japan), 2. KOKUSAI ELECTRIC (Japan), 3. IMaSS (Japan))

1:45 PM - 2:00 PM

[M-7-02] Formation of b–FeSi ₂ NDs by SiH ₄–Exposure to Fe–NDs

^○Haruto Saito¹, Katsunori Makihara¹, Noriyuki Taoka², Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Institute of Tech. (Japan))

2:00 PM - 2:15 PM

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

^○Yunosuke Sano¹, Wataru Yasuda¹, Noriyuki Taoka², Akio Ohta³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Aichi Inst. of Tech. (Japan), 3. Fukuoka Univ. (Japan))

2:15 PM - 2:30 PM

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing

^○Hideaki Tanimura¹, Yuto Ota², Hikaru Kawarazaki¹, Shinichi Kato¹, Takumi Mikawa¹, Yasuo Nara² (1. SCREEN Semiconductor Solutions Co., Ltd. (Japan), 2. Univ. of Hyogo (Japan))

2:30 PM - 2:45 PM

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure

^○Eun-Ki Hong¹, Shun-ichiro Ohmi¹, Secrytary Ohmi¹ (1. Tokyo Institute of Tech. (Japan))

2:45 PM - 3:00 PM

[M-7-06] High-quality Multilayer Graphene Formed by Layer Exchange with Alloy Catalysts

^○Reno Ito¹, Takashi Suemasu¹, Kaoru Toko¹ (1. Univ. of Tsukuba (Japan))

3:00 PM - 3:15 PM

[M-7-07 (Late News)] Significant Difference in Ferroelectric Phase Formation Kinetics in Post-deposition and Post-metallization Annealing of HZO Films

^○Tianning - Cui¹, Zhipeng - Xue¹, Danyang - Chen¹, Yuyan - Fan¹, Jingquan - Liu¹, Xiuyan - Li¹ (1. Shanghai Jiao Tong University (China))

Session information

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-01] Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation

[M-7-02] Formation of b–FeSi ₂ NDs by SiH ₄–Exposure to Fe–NDs

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure

[M-7-06] High-quality Multilayer Graphene Formed by Layer Exchange with Alloy Catalysts

[M-7-07 (Late News)] Significant Difference in Ferroelectric Phase Formation Kinetics in Post-deposition and Post-metallization Annealing of HZO Films

Authentication

Session information

[M-7] Advanced Materials, Nanofabrication, and Thin Films III

[M-7-01] Theoretical Study of the Gas-Phase Reaction of Hexachlorodisilane by Thermodynamic Analysis and Kinetics Calculation

[M-7-02] Formation of b–FeSi 2 NDs by SiH 4–Exposure to Fe–NDs

[M-7-03] Si Diffusion Control by Inserting SiO 2 Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf 0.5Zr 0.5O 2 Films by Two-Step Flash Lamp Annealing

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB 6 metal and LaB xN y insulator stacked structure

[M-7-06] High-quality Multilayer Graphene Formed by Layer Exchange with Alloy Catalysts

[M-7-07 (Late News)] Significant Difference in Ferroelectric Phase Formation Kinetics in Post-deposition and Post-metallization Annealing of HZO Films

Authentication

[M-7-02] Formation of b–FeSi ₂ NDs by SiH ₄–Exposure to Fe–NDs

[M-7-03] Si Diffusion Control by Inserting SiO ₂ Layer at Hf-Oxide/Si Interface for Transforming Hf-Oxide Crystalline Phase

[M-7-04] Enhancement of the Polarization Properties in Thin Ferroelectric Hf _0.5Zr _0.5O ₂ Films by Two-Step Flash Lamp Annealing

[M-7-05] Low-voltage operation of floating-gate type nonvolatile memory utilizing N-doped LaB ₆ metal and LaB _xN _yinsulator stacked structure