[N-1] GaN-based Power Devices

Wed. Sep 6, 2023 2:00 PM - 3:30 PM Room N (432, Bldg. 4)

Session Chairs: Toru Sugiyama (Toshiba Device & Strage Corporation), Heiji Watanabe (Osaka Univ.)

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2:00 PM - 2:30 PM

[N-1-01 (Invited)] Vertical GaN devices - Performance and Availability

^○Dinesh Ramanathan¹ (1. NexGen powersystems (United States of America))

2:30 PM - 2:45 PM

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

^○Katsunori Ueno¹, Turugi Kondo¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Tomoyuki Suwa² (1. Fuji Electric Co., Ltd. (Japan), 2. Tohoku Univ. (Japan))

2:45 PM - 3:00 PM

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

^○Yuki Ichikawa¹, Katsunori Ueno², Tsurugi Kondo², Ryo Tanaka², Shinya Takashima², Jun Suda¹ (1. Univ. of Nagoya (Japan), 2. Corp. of Fuji Electric (Japan))

3:00 PM - 3:15 PM

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

^○Seiya Kawasaki¹, Hirotaka Watanabe¹, Kentaro Nonaka², Tomohiko Sugiyama², Yoshitaka Kuraoka², Shugo Nitta¹, Atsushi Tanaka¹, Yoshio Honda¹, Hiroshi Amano¹ (1. Nagoya Univ. (Japan), 2. NGK Insulators, Ltd. (Japan))

3:15 PM - 3:30 PM

[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface

^○Zijun Zhou¹, Akio Ohta², Xiaoyu Tian¹, Noriyuki Taoka³, Katsunori Makihara¹, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan))

Session information

[N-1] GaN-based Power Devices

[N-1-01 (Invited)] Vertical GaN devices - Performance and Availability

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface

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Session information

[N-1] GaN-based Power Devices

[N-1-01 (Invited)] Vertical GaN devices - Performance and Availability

[N-1-02] Mobility enhancement in GaN-MOSFETs by surface Al doping

[N-1-03] Supression of Threshold Voltage Instability due to Positive Bias Stress in GaN Planer MOSFETs by Post-Deposition Anneal

[N-1-04] GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

[N-1-05] Impact of O 2 annealing on Chemical States of Mg doped GaN(0001) Surface

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[N-1-05] Impact of O ₂ annealing on Chemical States of Mg doped GaN(0001) Surface