[N-2] SiC Processes and Characterizations

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room N (432, Bldg. 4)

Session Chairs: Shinsuke Harada (National Institute of Advanced Industrial Science and Technology), Tomoya Ono (Kobe Univ.)

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4:00 PM - 4:30 PM

[N-2-01 (Invited)] Proton implantation: the last resort to solve bipolar degradation of SiC power devices?

^○Masashi Kato¹, Shunta Harada², Hitoshi Sakane³ (1. Nagoya Inst. of Tech. (Japan), 2. Nagoya Univ. (Japan), 3. SHI-ATEX Co. Ltd. (Japan))

4:30 PM - 4:45 PM

[N-2-02] Intrinsic carrier density in 4H-SiC obtained from diffusion current in bipolar junction transistor

Satoshi Asada¹, ^○Koichi Murata¹, Hajime Tanaka², Hidekazu Tsuchida¹ (1. CRIEPI (Japan), 2. Osaka Univ. (Japan))

4:45 PM - 5:00 PM

[N-2-03] Measurement of Heat Dissipation between SiC and Thermal Interface Material in Power Device Packaging Based on Optical-Interference Contactless Thermometry

^○Jiawen Yu¹, Ryunosuke Goto¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1. Hiroshima Univ. (Japan))

5:00 PM - 5:15 PM

[N-2-04] Analysis of Tunneling Effects in 4H-SiC Schottky Barrier Diodes Based on Complex Band Structure Considering Barrier Potential

^○Yutoku Murakami¹, Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

5:15 PM - 5:30 PM

[N-2-05 (Late News)] Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

^○Masaki Sano¹, Jun Kojima², Shoichi Onda², Takashi Yoda³, Takayuki Ohba³, Kenji Shiraishi^1,2 (1. Graduate School of Engineering, Nagoya University (Japan), 2. Institute of Materials and Systems for Sustainability (Japan), 3. WOW Alliance, Tokyo Institute of Technology (Japan))

Session information