[N-4] Si-based Power Devices

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room N (432, Bldg. 4)

Session Chairs: Tetsuya Nitta (Mitsubishi Electric Corporation), Yuichi Onozawa (Fuji Electric Corporation)

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10:45 AM - 11:00 AM

[N-4-01] Grid-Patterned Trench IGBT for 1.2kV HEV/PHEV Silicon Power Devices

^○Satoru Machida¹, Yusuke Yamashita¹, Jun Saito², Masaru Senoo³ (1. Toyota Central R&D Labs. Inc. (Japan), 2. MIRISE Tech. Corp. (Japan), 3. DENSO Corp. (Japan))

11:00 AM - 11:15 AM

[N-4-02] Restoration of Degraded Reverse Bias Safety Operating Area (RBSOA) in 3300V Scaled IGBTs by Non-Proportional Scaling Method

^○Xiang Zhou¹, Munetoshi Fukui¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Wataru Saito², Toshiro Hiramoto¹ (1. The Univ. of Tokyo (Japan), 2. Kyushu Univ. (Japan))

11:15 AM - 11:30 AM

[N-4-03] Study on Stress in Trench Structures during Silicon IGBTs Process – Oxidation

^○Bozhou Cai¹, Jiuyang Yuan¹, Yoshiji Miyamura¹, Wataru Saito¹, Shin-ichi Nishizawa¹ (1. Univ. of Kyushu (Japan))

11:30 AM - 11:45 AM

[N-4-04] Wafer Warpage Modeling for Process Integration of Trench Field Plate Power MOSFETs

^○Hiroaki Kato¹, Bozhou Cai¹, Jiuyang Yuan¹, Yoshiji Miyamura¹, Shin-ichi Nishizawa¹, Wataru Saito¹ (1. Kyushu Univ. (Japan))

11:45 AM - 12:00 PM

[N-4-05] Drain Leakage Current Control of Si Power MOSFETs with Fast Recovery Diodes

^○Hiroki Nemoto¹, Tsuyoshi Kachi¹, Hiroaki Kato¹, Katsura Miyashita¹ (1. Toshiba Electronic Devices & Storage Corp. (Japan))

Session information