[N-6] Diamond-based Devices

Fri. Sep 8, 2023 10:45 AM - 11:45 AM Room N (432, Bldg. 4)

Session Chairs: Satoshi Yamasaki (Kanazawa Univ.), Shinsuke Harada (National Institute of Advanced Industrial Science and Technology)

+Add all to schedule

10:45 AM - 11:15 AM

[N-6-01 (Invited)] High-mobility p-channel field-effect transistors based on hydrogen-terminated diamond/h-BN heterostructures

^○Takahide Yamaguchi¹ (1. NIMS (Japan))

11:15 AM - 11:30 AM

[N-6-02] Normally-Off Operation in Vertical Diamond MOSFETs Using Oxidized Si Termination Diamond Channel Formed by Si Molecular Beam Deposition Approaches

^○Kento Narita¹, Kosuke Ota¹, Yu Fu¹, Chiyuki Wakabayashi¹, Atushi Hiraiwa¹, Hiroshi Kawarada^1,2 (1. School of Fundamental Science & Engineering Waseda Univ. (Japan), 2. The Kagami Memorial Research Inst. for Materials Science and Technology (Japan))

11:30 AM - 11:45 AM

[N-6-03] Radiation Effects on 2DHG Diamond MOSFETs with Boron-doped Source and Drain Layers

^○Xuezhen Jia¹, Yukiko Suzuki¹, Sukeyasu Deguchi², Fuga Asai¹, Akira Takahashi¹, Atsushi Hiraiwa¹, Junichi Kaneko², Hiroshi Kawarada^1,3 (1. School of Fundamental Science and Engineering Waseda Univ. (Japan), 2. School of Engineering Hokkaido Univ. (Japan), 3. Kagami Memorial Reasearch Inst. for Materials Science and Technology, Waseda Univ. (Japan))