[N-7] Ga2O3-based Devices

Fri. Sep 8, 2023 1:30 PM - 3:00 PM Room N (432, Bldg. 4)

Session Chairs: Yongzhao Yao (Japan Fine Ceramics Center), Joel T. Asubar (Univ. of Fukui)

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1:30 PM - 2:00 PM

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

^○Andrew Green¹ (1. Air Force Res. Lab. (United States of America))

2:00 PM - 2:15 PM

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

^○Minghao He^1,2, Mujun Li², Xiaohui Wang², Qing Wang², Hongyu Yu², Kah-Wee Ang¹ (1. National Univ. of Singapore (Singapore), 2. Southern Univ. of Sci. and Tech. (China))

2:15 PM - 2:30 PM

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

^○Mujun Li¹, Minghao He^2,1, Xiaohui Wang¹, Qing Wang¹, Kah-Wee Ang², Hongyu Yu¹ (1. Southern Univ. of Sci. and Tech. (China), 2. National Univ. of Singapore (Singapore))

2:30 PM - 2:45 PM

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination

^○Yohei Yuda¹, Kohei Ebihara¹, Takuma Nanjo¹, Masayuki Furuhashi¹, Tatsuro Watahiki¹, Kazuyasu Nishikawa¹ (1. Mitsubishi Electric Corp. (Japan))

2:45 PM - 3:00 PM

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

^○Xiaole Jia¹, Yibo Wang^1,2, Cizhe Fang¹, Yan Liu¹, Yue Hao¹, Genquan Han¹ (1. Xidian University (China), 2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China))

Session information

[N-7] Ga2O3-based Devices

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

Authentication

Session information

[N-7] Ga2O3-based Devices

[N-7-01 (Invited)] Recent Progress towards high-performance lateral Ga2O3 FETs

[N-7-02] Trap Analysis of Normally-off Ga 2O 3 MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

[N-7-03] High Performance Ga 2O 3 Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

[N-7-04] A Simulation Study of Vertical Ga 2O 3 Schottky Barrier Diodes Using Field Plate Termination

[N-7-05] Theoretical Investigation of β-(Al xGa 1- x) 2O 3/Ga 2O 3 Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure

Authentication

[N-7-02] Trap Analysis of Normally-off Ga ₂O ₃ MOSFET Enabled by Charge Trapping Layer Using Photon Stimulated Characterization

[N-7-03] High Performance Ga ₂O ₃ Schottky Barrier Diode with Patterned Mg-CBL Rings Fabricated using a Damage-Free Doping Technique

[N-7-04] A Simulation Study of Vertical Ga ₂O ₃ Schottky Barrier Diodes Using Field Plate Termination

[N-7-05] Theoretical Investigation of β-(Al _xGa _1- _x) ₂O ₃/Ga ₂O ₃ Modulation-Doped Field-Effect Transistors with Dual-Metal Gate Structure