^○Adil Padiyal¹, Ayumu Yamada¹, Naoko Misawa¹, Chihiro Matsui¹, Ken Takeuchi¹ (1.The University of Tokyo (Japan))

^○Chun-I Kuo¹, Kai-Sheun Lee¹, Yi-Fan Chen¹, Yung-Hsien Wu¹ (1. Department of Engineering and System Science National Tsing Hua Univ. (Taiwan))

^○Yu Tzu Tsai¹, Zeng Kai Chen¹, Sheng Min Wang¹, Cheng Rui Liu¹, Yu Ting Chen¹, Zi Rong Huang¹, Chia Shuo Pai¹, Ying Tsan Tang*¹ (1. National Central Univ. (Taiwan))

^○Tatsuya Inoue¹, Takashi Onaya², Koji Kita^1,2 (1. Dept. of Materials Engineering, The Univ. of Tokyo (Japan), 2. Dept. of Advanced Materials Science, The Univ. of Tokyo (Japan))

Kaixuan Li¹, Yue Peng¹, wenwu xiao^2,1, Yan Liu¹, Genquan Han¹, Yue Hao¹ (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi’an UniIC Semiconductors Company Ltd. (China))

^○Fu- Sheng chang², Kuo-Yu Hsiang^3,1, Jia-Yang Lee¹, Zhao-Feng Lou¹, Zong-Han Li⁴, Jia-Hong Chen⁴, Cheng-Hong Liu¹, Ming Han Liao⁵, Chee Wee Liu^1,2, Min Hung Lee¹ (1. Graduate School of Advance Tech., National Taiwan Univ. (Taiwan), 2. Graduate Institute of Electronics Eng., National Taiwan Univ. (Taiwan), 3. Inst. of Electronics, National Yang Ming Chiao Tung University (Taiwan), 4. Inst. and Undergraduate Program of Electro-Optical Eng., National Taiwan Normal Univ. (Taiwan), 5. Department of Mechanical Eng., National Taiwan Univ. (Taiwan))

^○JAY LIU¹, Cheng-Hung Wu¹, Masaharu Kobayashi², Chun-Jung Su³, Vita Pi-Ho Hu¹ (1. National Taiwan Univ. (Taiwan), 2. Univ. of Tokyo (Japan), 3. National Yang Ming Chiao Tung Univ. (Taiwan))

^○Fengbin - Tian¹, Xiaoqing - Sun¹, Shuangshuang - Xu¹, Songwei - Li¹, Junshuai - Chai¹, Hao - Xu¹, Xiaolei - Wang¹, Wenwu - Wang² (1. Institute of Microelectronics of the Chinese Academy of Sciences (China), 2. Bureau of Major R&D Program Chinese Academy of Sciences (China))

^○Chen-Wei Huang¹, Pin Su¹ (1. National Yang Ming Chiao Tung University (Taiwan))

Qiang Wang^1,2, ^○Shao-Xiang Go¹, Desmond Loke¹ (1. Singapore University of Technology and Design (Singapore), 2. Agency for Science, Technology and Research (A*STAR) (Singapore))

^○Si- Meng Chen¹, Sung-Lin Tsai¹, Takuya Hoshii¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Kuniyuki Kakushima¹ (1. Tokyo Inst. of Tech. (Japan))

^○Dong Hoon Shin¹, Taegyun Park¹, Yeong Rok Kim¹, Cheol Seong Hwang¹ (1. Seoul National Univ. (Korea))

^○Yuki Koizumi¹, Ryotaro Miyake¹, Yusuke Hayashi¹, Tetsuya Tohei¹, Akira Sakai¹ (1. Osaka Univ. (Japan))

Haider Abbas¹, Asif Ali¹, ^○Jiayi Li¹, Diing Shenp Ang¹ (1. Nanyang Technological Univ. (Singapore))

^○Myoungsu Chae¹, Doowon Lee¹, Hee-Dong Kim¹ (1. Univ. of Sejong (Korea))

^○Abhinav Kranti¹, Rohit Kumar Nirala¹, Sandeep Semwal¹ (1. Indian Institute of Technology Indore, India (India))

^○Seung Ji Bae¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Min Seok Kim¹, Jeong Woo Hong¹, Jaewon Jang¹, Jin-Hyuk Bae¹, Sin-Hyung Lee¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

^○Min Seok Kim¹, Sang Ho Lee¹, Jin Park¹, Ga Eon Kang¹, Jun Hyeok Heo¹, So Ra Jeon¹, Jeong Woo Hong¹, Seung Ji Bae¹, In Man Kang¹ (1. Kyungpook National Univ. (Korea))

Daewoong Kang³, ^○Hyowon Kang¹, Hyoungsoo Kim² (1. Korea Int’l School (Korea), 2. California State Polytechnics Uni (United States of America), 3. Soul National Uni (Korea))

^○CHENG- RUI LIU¹, SHENG-MIN WANG¹, YU-TING CHEN¹, SHAO-CHEN LEE¹, YING-TSAN TANG¹ (1. National Central Univ. (Taiwan))

^○Koji Sakui¹, Yisuo Li¹, Yoshihisa Iwata¹, Masakazu Kakumu¹, Nozomu Harada¹ (1. Unisantis Electronics Singapore (Singapore))

^○Samapika Mallik¹, Tohru Tsuruoka², Takashi Tsuchiya³, Kazuya Terabe ⁴ (1. National Inst. for materials sci. (Japan), 2. National Inst. for materials sci. (Japan), 3. National Inst. for materials sci. (Japan), 4. National Inst. for materials sci. (Japan))

^○Junhyeong Lee¹, Misun Cha¹, Min-Woo Kwon¹ (1. Gangneung-Wonju National Univ (Korea))