[PS-4-01] Turn-Off Switching Voltage Surge Analysis with Dependence on IGBT Cell Design

Yuri Fujimoto¹, Shin-ichi Nishizawa¹, ^○Wataru Saito¹ (1.Kyushu Univ. (Japan))

[PS-4-02] Investigation of Problems with Current Filament Simulation Model for Two-dimensional Multi-cell Structure in IGBTs

^○Takeshi Suwa¹, Kozo Kinoshita¹ (1. Toshiba Electronic Devices & Storage Corp. (Japan))

[PS-4-03] A 4H-SiC p-channel IGBT with Higher Breakdown Voltage and Superior VF·Crss FOM

Erjun Wang^1,2, Xiaoli Tian¹, ^○Wei Wei^1,2, Yun Bai¹, Jilong Hao¹, Chengyue Yang¹, Yidan Tang¹, Xinyu Liu¹ (1. Inst. of Microelectronics of the Chinese Academy of Sci. (China), 2. the Chinese Academy of Sci. (China))

[PS-4-04] Recombination coefficients for 3C- and 6H-SiC to analyze carrier recombination at stacking faults in 4H-SiC

^○Kazuhiro “-” TANAKA¹, Masashi “-” KATO¹ (1. Nagoya Institute Technology (Japan))

[PS-4-05] First-Principles Study for Orientation Dependence of Band Alignments at 4H-SiC/SiO₂ Interface

^○Shun - Matsuda¹, Toru - Akiyama¹, Tetsuo - Hatakeyama², Kenji - Shiraishi³, Takashi - Nakayama⁴ (1. Mie Univ. (Japan), 2. Toyama Pref. Univ. (Japan), 3. Nagoya Univ. (Japan), 4. Chiba Univ. (Japan))

[PS-4-06] Wannier-Stark Localization of Electronic States in 4H-SiC MOS Inversion Layer

^○Sachika Nagamizo¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

[PS-4-07] First-principles calculation for SiC/SiO₂ interface atomic structure after NO annealing

^○Mizuho Ohmoto¹, Naoki Komatsu¹, Mitsuharu Uemoto¹, Tomoya Ono¹ (1. Univ. of Kobe (Japan))

[PS-4-08] Reaching the GaN Theoretical Limit (FOM of 6.6 GW/cm²) by Fabricating Vertical GaN Diodes with Micron Column Schottky Contact

Shuai Li¹, Bo Li¹, Zhengweng Ma¹, Huakai Yang¹, Shijie He¹, Jiajun Han², Yu Li¹, Xiaohua Li¹, Wei He¹, ^○Xinke - Liu¹ (1. Shenzhen Univ. (China), 2. South China Normal Univ. (China))

[PS-4-09] High Quality GaN Epitaxy and SAW Resonators on Sapphire Substrates with Cross-Stacked Carbon Nanotube Films

^○lei xiao¹, Guofang Yu¹, Renrong Liang¹, Jun Xun¹, Yang Wei¹, Jing Wang¹ (1. Univ. of Tsinghua (China))

[PS-4-10] AlGaN/GaN MIS-HEMT on PVD-Grown AlN-on-Si wafer for Power Applications

^○Bing- Syuan Li¹, Tsung-Han Chiang², You-Chen Weng³, Tsung-Ying Yang², Edward Yi Chang^2,4, Chin-Han Chung², Michel Khoury⁵, Helen Zhao⁵ (1. Master’s Degree Program of Applied Science and Technology, College of Science, National Yang Ming Chiao Tung Univ. (Taiwan), 2. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 3. College of Photonics, National Yang Ming Chiao Tung Univ. (Taiwan), 4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung Univ. (Taiwan), 5. Applied Materials, Ltd. (United States of America))

[PS-4-11] Impact of Different Ohmic Etching Patterns on the K- and Ka-Band Noise Figure of AlGaN/GaN HEMTs

^○Ming-Wen Lee^1,2, Yueh-Chin Lin¹, Cheng-Wei Chuang¹, Edward Yi Chang^1,3 (1. International College of Semiconductor Technology, National Yang Ming Chiao Tung Univ. (Taiwan), 2. Department of Electronics and Computer Technology, Univ. of Granada (Spain), 3. Inst. of Microengineering and Nanoelectronics, Univ. Kebangsaan Malaysia (Malaysia))

[PS-4-12] Full-Band Monte Carlo Analysis of Strain Effects on Carrier Transport in GaN

^○Wataru Miyazaki¹, Hajime Tanaka¹, Nobuya Mori¹ (1. Osaka Univ. (Japan))

[PS-4-13] Improvement of Noise and Output Power Performance in GaN HEMT with Thick Cu-Interconnection for Satellite System Applications

^○Po-Wei CHEN¹, Chieh Cheng¹, Yueh-Chin Lin¹, Edward Yi Chang¹ (1. Univ. National Yang Ming Chiao Tung (Taiwan))

[PS-4-14] Machine Learning Framework to Extract Small Signal Equivalent Circuit Models of AlGaN/GaN HEMTs for Broadband Parametric Analysis

Aasim Ashai¹, Aakash Jadhav¹, Avirup Dasgupta¹, ^○Biplab Sarkar¹, Sourajeet Roy¹ (1. Indian Institute of Technology Roorkee (India))

Cancelled

[PS-4-15] Withdrawn

[PS-4-16] GaAsSb/InGaAs tunnel FETs using thick SiO₂ mask for regrowth

Ruifeng Xu¹, ^○Jiawei Fan¹, Masakazu Arai², Yasuyuki Miyamoto¹ (1. Tokyo Tech (Japan), 2. Miyazaki Univ. (Japan))

[PS-4-17 (Late News)] GaN Heterojunction Rectifier Diode with Low Turn-On Voltage and High Breakdown Voltage for Energy Harvesting

^○Naotaka Iwata¹, Kouki Hino², Maria Emma Castil Villamin³ (1. Toyota Tech. Inst. (Japan), 2. Toyota Tech. Inst. (Japan), 3. Toyota Tech. Inst. (Japan))

Session information

[PS-4] 04: Power / High‐speed Devices and Materials