Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement

Ryo Nanae

doi:https://doi.org/10.7567/SSDM.2023.A-1-02

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-1] Characterization I: Low Dimensional Devices and Materials

2023年9月6日(水) 14:00 〜 15:15 Room A (131+132, Bldg. 1)

Session Chairs: Takayuki Arie (Osaka Metropolitan Univ.), Yusuke Hoshi (Tokyo City Univ.)

14:30 〜 14:45

[A-1-02] Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement

^○Ryo Nanae¹, Satsuki Kitamura¹, Yih-Ren Chang^1,2, Tomonori Nishimura¹, Keisuke Shinokita³, Kazunari Matsuda³, Kosuke Nagashio¹ (1. the Univ. of Tokyo (Japan), 2. RIKEN (Japan), 3. Kyoto Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-1-02

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講演情報

[A-1] Characterization I: Low Dimensional Devices and Materials

[A-1-02] Growth and Characterization of SnS Ferroelectric Phase for BPVE Measurement

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