Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

Ryosuke Kajikawa

doi:https://doi.org/10.7567/SSDM.2023.A-2-03

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[A-2] Device Application I: Low Dimensional Devices and Materials

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room A (131+132, Bldg. 1)

Session Chairs: Mahito Yamamoto (Kansai Univ.), Takeshi Yanagida (Univ. of Tokyo)

4:30 PM - 4:45 PM

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs

^○Ryosuke Kajikawa¹, Takamasa Kawanago¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2023.A-2-03

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[A-2] Device Application I: Low Dimensional Devices and Materials

[A-2-03] Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

Password

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs