Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

Ryosuke Kajikawa

doi:https://doi.org/10.7567/SSDM.2023.A-2-03

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-2] Device Application I: Low Dimensional Devices and Materials

2023年9月6日(水) 16:00 〜 17:30 Room A (131+132, Bldg. 1)

Session Chairs: Mahito Yamamoto (Kansai Univ.), Takeshi Yanagida (Univ. of Tokyo)

16:30 〜 16:45

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs

^○Ryosuke Kajikawa¹, Takamasa Kawanago¹, Iriya Muneta¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Hitoshi Wakabayashi¹ (1. Tokyo Institute of Technology (Japan))

https://doi.org/10.7567/SSDM.2023.A-2-03

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講演情報

[A-2] Device Application I: Low Dimensional Devices and Materials

[A-2-03] Self-Aligned WO x S/D Contacts to Gate Stacks with TiO x Nucleation Layer by Multiple-Deposition Method in WSe 2 pFETs

パスワード

[A-2-03] Self-Aligned WO _x S/D Contacts to Gate Stacks with TiO _x Nucleation Layer by Multiple-Deposition Method in WSe ₂ pFETs