High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation

Tianshun Xie

doi:https://doi.org/10.7567/SSDM.2023.A-2-05

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[A-2] Device Application I: Low Dimensional Devices and Materials

Wed. Sep 6, 2023 4:00 PM - 5:30 PM Room A (131+132, Bldg. 1)

Session Chairs: Mahito Yamamoto (Kansai Univ.), Takeshi Yanagida (Univ. of Tokyo)

5:00 PM - 5:15 PM

[A-2-05] High-performance CMOS inverter based on MoTe ₂-FETs achieved by contact doping and channel encapsulation

^○Tianshun Xie¹, Mengnan Ke², Nobuyuki Aoki³ (1. Chiba Univ. (Japan), 2. Chiba Univ. (Japan), 3. Chiba Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-2-05

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Presentation information

[A-2] Device Application I: Low Dimensional Devices and Materials

[A-2-05] High-performance CMOS inverter based on MoTe 2-FETs achieved by contact doping and channel encapsulation

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[A-2-05] High-performance CMOS inverter based on MoTe ₂-FETs achieved by contact doping and channel encapsulation