Evaluation of Si and Ge Segregation from Si <sub>0.2</sub>Ge <sub>0.8</sub>(111) through Al and Ag Layer

Taiki Sakai

doi:https://doi.org/10.7567/SSDM.2023.A-3-03

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

2023年9月7日(木) 09:00 〜 10:00 Room A (131+132, Bldg. 1)

Session Chairs: Masafumi Jo (RIKEN), Satoshi Hiura (Hokkaido Univ.)

09:45 〜 10:00

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer

^○Taiki Sakai¹, Akio Ohta², Noriyuki Taoka³, Junji Yuhara¹, Katsunori Makihara¹, Yuji Yamamoto⁴, Wei-chen Wen⁴, Seiichi Miyazaki¹ (1. Nagoya Univ. (Japan), 2. Fukuoka Univ. (Japan), 3. Aichi Inst. of Tech. (Japan), 4. IHP (Germany))

https://doi.org/10.7567/SSDM.2023.A-3-03

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[A-3] Growth and Synthesis: Low Dimensional Devices and Materials

[A-3-03] Evaluation of Si and Ge Segregation from Si 0.2Ge 0.8(111) through Al and Ag Layer

パスワード

[A-3-03] Evaluation of Si and Ge Segregation from Si _0.2Ge _0.8(111) through Al and Ag Layer