Strong Gate Modulation Effect in Nanoscale TiN Channels

Yu- An Lai

doi:https://doi.org/10.7567/SSDM.2023.A-4-03

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-4] Characterization II: Low Dimensional Devices and Materials

2023年9月7日(木) 10:45 〜 11:45 Room A (131+132, Bldg. 1)

Session Chairs: Masafumi Jo (RIKEN), Takayuki Arie (Osaka Metropolitan Univ.)

11:15 〜 11:30

[A-4-03] Strong Gate Modulation Effect in Nanoscale TiN Channels

^○Yu- An Lai¹, Chin-Te Wang¹, Yu-An Chou¹, Shun-Tsung Lo¹, Thi Hien Do¹, Sheng-Di Lin¹ (1. National Yang Ming Chiao Tung University (Taiwan))

https://doi.org/10.7567/SSDM.2023.A-4-03

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講演情報

[A-4] Characterization II: Low Dimensional Devices and Materials

[A-4-03] Strong Gate Modulation Effect in Nanoscale TiN Channels

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