Stack control of Bi/Au bilayer electrodes toward <i>p</i>-type WSe <sub>2</sub> FET

Ryuichi Nakajima

doi:https://doi.org/10.7567/SSDM.2023.A-7-03

Presentation information

Oral Presentation

08: Low Dimensional Devices and Materials

[A-7] Device Application III: Low Dimensional Devices and Materials

Fri. Sep 8, 2023 1:30 PM - 2:45 PM Room A (131+132, Bldg. 1)

Session Chairs: Shengnan Wang (NTT Basic Research Laboratories), Yusuke Hoshi (Tokyo City Univ.)

2:15 PM - 2:30 PM

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe ₂ FET

^○Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Yasumitsu Miyata³, Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan), 3. Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-7-03

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Presentation information

[A-7] Device Application III: Low Dimensional Devices and Materials

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe 2 FET

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[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe ₂ FET