Stack control of Bi/Au bilayer electrodes toward <i>p</i>-type WSe <sub>2</sub> FET

Ryuichi Nakajima

doi:https://doi.org/10.7567/SSDM.2023.A-7-03

講演情報

Oral Presentation

08: Low Dimensional Devices and Materials

[A-7] Device Application III: Low Dimensional Devices and Materials

2023年9月8日(金) 13:30 〜 14:45 Room A (131+132, Bldg. 1)

Session Chairs: Shengnan Wang (NTT Basic Research Laboratories), Yusuke Hoshi (Tokyo City Univ.)

14:15 〜 14:30

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe ₂ FET

^○Ryuichi Nakajima¹, Tomonori Nishimura¹, Keiji Ueno², Yasumitsu Miyata³, Kosuke Nagashio¹ (1. The Univ. of Tokyo (Japan), 2. Saitama Univ. (Japan), 3. Tokyo Metropolitan Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.A-7-03

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講演情報

[A-7] Device Application III: Low Dimensional Devices and Materials

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe 2 FET

パスワード

[A-7-03] Stack control of Bi/Au bilayer electrodes toward p-type WSe ₂ FET