Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

Yoshifumi Morita

doi:https://doi.org/10.7567/SSDM.2023.A-8-01

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Oral Presentation

08: Low Dimensional Devices and Materials

[A-8] Characterization III: Low Dimensional Devices and Materials

Fri. Sep 8, 2023 3:30 PM - 4:15 PM Room A (131+132, Bldg. 1)

Session Chairs: Shu Nakaharai (Tokyo Univ. of Technology), Mahito Yamamoto (Kansai Univ.)

3:30 PM - 3:45 PM

[A-8-01] Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

^○Yoshifumi Morita¹, Takuya Iwasaki², Kenji Watanabe², Takashi Taniguchi² (1. Gunma Univ. (Japan), 2. National Inst. for Material Sci. (Japan))

https://doi.org/10.7567/SSDM.2023.A-8-01

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Presentation information

[A-8] Characterization III: Low Dimensional Devices and Materials

[A-8-01] Dual gating of hBN/bilayer-graphene superlattices: band-engineering and doping a Dirac material

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