Electrical formation of electron-hole bilayer system in Si MOS transistors

Masahiro Hori

doi:https://doi.org/10.7567/SSDM.2023.B-2-02

講演情報

Focus Session

Focus Session (Area 1&2&9)

[B-2] Quantum and cold computing 2 / Quantum devices and technologies

2023年9月6日(水) 16:00 〜 17:30 Room B (133+134, Bldg. 1)

Session Chairs: Tokuro Hata (Tokyo Tech), Yasutomo Ota (Keio Univ.)

16:30 〜 16:45

[B-2-02] Electrical formation of electron-hole bilayer system in Si MOS transistors

^○Masahiro Hori¹, Jinya Kume¹, Yukinori Ono¹ (1. Shizuoka Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.B-2-02

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講演情報

[B-2] Quantum and cold computing 2 / Quantum devices and technologies

[B-2-02] Electrical formation of electron-hole bilayer system in Si MOS transistors

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