<i>Deep Physical Reservoir Computing Achieved by</i> <i>Electric Double Layer Ion-Gating Reservoir</i>

Daiki Nishioka

doi:https://doi.org/10.7567/SSDM.2023.B-6-02

Presentation information

Oral Presentation

09: Novel Functional / Quantum / Spintronic Devices and Materials

[B-6] Neuromorphic devices and materials

Fri. Sep 8, 2023 10:45 AM - 12:15 PM Room B (133+134, Bldg. 1)

Session Chairs: Yoshifumi Nishi (Toshiba Corp.), Takashi Tsuchiya (NIMS)

11:15 AM - 11:30 AM

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

^○Daiki Nishioka^1,2, Takashi Tsuchiya¹, Wataru Namiki¹, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1. National Institute for Materials Science (Japan), 2. Tokyo Univ. of Sci. (Japan))

https://doi.org/10.7567/SSDM.2023.B-6-02

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Presentation information

[B-6] Neuromorphic devices and materials

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

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