<i>Deep Physical Reservoir Computing Achieved by</i> <i>Electric Double Layer Ion-Gating Reservoir</i>

Daiki Nishioka

doi:https://doi.org/10.7567/SSDM.2023.B-6-02

講演情報

Oral Presentation

09: Novel Functional / Quantum / Spintronic Devices and Materials

[B-6] Neuromorphic devices and materials

2023年9月8日(金) 10:45 〜 12:15 Room B (133+134, Bldg. 1)

Session Chairs: Yoshifumi Nishi (Toshiba Corp.), Takashi Tsuchiya (NIMS)

11:15 〜 11:30

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

^○Daiki Nishioka^1,2, Takashi Tsuchiya¹, Wataru Namiki¹, Masataka Imura¹, Yasuo Koide¹, Tohru Higuchi², Kazuya Terabe¹ (1. National Institute for Materials Science (Japan), 2. Tokyo Univ. of Sci. (Japan))

https://doi.org/10.7567/SSDM.2023.B-6-02

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講演情報

[B-6] Neuromorphic devices and materials

[B-6-02] Deep Physical Reservoir Computing Achieved by Electric Double Layer Ion-Gating Reservoir

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