Giant electrostatic modulation of transient characteristics in metal-to-insulator VO <sub>2</sub> transition

Satoshi Hamasuna Hamasuna

doi:https://doi.org/10.7567/SSDM.2023.B-6-04

講演情報

Oral Presentation

09: Novel Functional / Quantum / Spintronic Devices and Materials

[B-6] Neuromorphic devices and materials

2023年9月8日(金) 10:45 〜 12:15 Room B (133+134, Bldg. 1)

Session Chairs: Yoshifumi Nishi (Toshiba Corp.), Takashi Tsuchiya (NIMS)

11:45 〜 12:00

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition

^○Satoshi Hamasuna Hamasuna¹, Satya Prakash Pati¹, Takeaki Yajima¹ (1. Kyushu Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.B-6-04

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講演情報

[B-6] Neuromorphic devices and materials

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO 2 transition

パスワード

[B-6-04] Giant electrostatic modulation of transient characteristics in metal-to-insulator VO ₂ transition