Novel WN x/C Interfacial Layer on Hf 0.5Zr 0.5O 2 Ferroelectric Memory

Abhijit Aich

doi:https://doi.org/10.7567/SSDM.2023.B-6-05

12:00 PM - 12:15 PM

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory

^○Abhijit Aich¹, Asim Senapati¹, Zhao- Feng Lou², Fu- Sheng Chang², Yu- Rui Chen², Yi- Pin Chen^1,3, Shih- Yin Huang^3,4, Siddheswar Maikap^1,3, Chee- Wee Liu², Min- Hung Lee² (1. Chang Gung Univ. (Taiwan), 2. National Taiwan Univ. (Taiwan), 3. Keelung Chang Gung Memorial Hospital (Taiwan), 4. Chang Gung University College of Medicine (Taiwan))

https://doi.org/10.7567/SSDM.2023.B-6-05

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Presentation information

[B-6] Neuromorphic devices and materials

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory

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Presentation information

[B-6] Neuromorphic devices and materials

[B-6-05] Novel WN x/C Interfacial Layer on Hf 0.5Zr 0.5O 2 Ferroelectric Memory

Password

[B-6-05] Novel WN _x/C Interfacial Layer on Hf _0.5Zr _0.5O ₂ Ferroelectric Memory