The Japan Society of Applied Physics

2023 International Conference on Solid State Devices and Materials

2023 International Conference on Solid State Devices and Materials

Sep 5, 2023 - Oct 31, 2023
Nagoya Congress Center

11:45 AM - 12:00 PM

[C-6-04] Surface Passivation and Charge Transfer at TiO 2/Si Interface

○Xiaolong Liu1, Ramsha Khan2, Hannu P. Pasanen2, Harri Ali-Löytty3, Ville Vähänissi1, Mika Valden3, Nikolai V. Tkachenko2, Hele Savin1 (1. Electron Physics Group, Aalto Univ. (Finland), 2. Photonic Compounds and Nanomaterials Group, Tampere Univ. (Finland), 3. Surface Science Group, Tampere Univ. (Finland))

https://doi.org/10.7567/SSDM.2023.C-6-04

Titanium dioxide (TiO2) is widely employed in photoelectric applications. This study investigates the surface passivation and charge transfer dynamics of a TiO2 layer grown on Si by atomic layer deposition (ALD). We analyze the passivation effect of TiO2 by measuring carrier lifetime and surface barrier height, and study charge transfer dynamics at TiO2/Si using contactless transient reflectance spectroscopy. Results show that a proper chemical treatment on p-Si prior to ALD enhances both the charge transfer properties and passivation effects.