Enhancing Performance of High- <i>k</i> Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel

Tae-Hwan Hyun

doi:https://doi.org/10.7567/SSDM.2023.D-5-04

Presentation information

Oral Presentation

07: Organic / Molecular / Bio‐electronics

[D-5] High-sensitive devices for chem/bio detection 2

Fri. Sep 8, 2023 9:00 AM - 10:00 AM Room D (222, Bldg. 2)

Session Chairs: Takashi Tokuda (Tokyo Institute of Technology), Hiroaki Takehara (The Univ. of Tokyo)

9:45 AM - 10:00 AM

[D-5-04] Enhancing Performance of High- k Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel

^○Tae-Hwan Hyun¹, Won-Ju Cho¹ (1. Kwangwoon Univ. (Korea))

https://doi.org/10.7567/SSDM.2023.D-5-04

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Presentation information

[D-5] High-sensitive devices for chem/bio detection 2

[D-5-04] Enhancing Performance of High- k Engineered Dual-gate Ion-Sensitive Field-Effect Transistor through Template Transfer of Electrospun Polyvinylpyr-rolidone Nanofibers onto Random-Network Si Nanowire Channel

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