Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

wenzhong zhang

doi:https://doi.org/10.7567/SSDM.2023.D-6-03

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Oral Presentation

07: Organic / Molecular / Bio‐electronics

[D-6] Advanced organic devices

Fri. Sep 8, 2023 10:45 AM - 12:15 PM Room D (222, Bldg. 2)

Session Chairs: Hiroaki Iino (Tokyo Institute of Technology), Hisashi Kino (Tohoku Univ.)

11:15 AM - 11:30 AM

[D-6-03] Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

^○wenzhong zhang¹, Haruka Komatsu¹, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1. Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.D-6-03

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Presentation information

[D-6] Advanced organic devices

[D-6-03] Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

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