Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

wenzhong zhang

doi:https://doi.org/10.7567/SSDM.2023.D-6-03

講演情報

Oral Presentation

07: Organic / Molecular / Bio‐electronics

[D-6] Advanced organic devices

2023年9月8日(金) 10:45 〜 12:15 Room D (222, Bldg. 2)

Session Chairs: Hiroaki Iino (Tokyo Institute of Technology), Hisashi Kino (Tohoku Univ.)

11:15 〜 11:30

[D-6-03] Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

^○wenzhong zhang¹, Haruka Komatsu¹, Shingo Maruyama¹, Kenichi Kaminaga¹, Yuji Matsumoto¹ (1. Tohoku Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.D-6-03

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講演情報

[D-6] Advanced organic devices

[D-6-03] Nonvolatile Operation of Resistive Memory with Ionic Liquid Crystal Thin Film as Switching Layer

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