10:45 AM - 11:15 AM
[E-4-01 (Invited)] Polysilicon channel in 3-D NAND: Challenges and Strategies for Improvement
The 3-D NAND industry is currently exploring beyond 300 layers. Polysilicon channel, rich in defects, is a major cause of concern for the string read operation in tall 3-D NAND. Technological innovations, such as, macaroni channel, H2 passivation, grain size engineering techniques and alternative crystallization processes help to keep 3-D NAND in a viable scaling path.
