Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization

Linyu Huang

doi:https://doi.org/10.7567/SSDM.2023.E-7-04

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-7] Advanced LTPS TFTs and related technologies

2023年9月8日(金) 13:45 〜 15:00 Room E (223, Bldg. 2)

Session Chairs: Shin-ichiro Kuroki (Hiroshima Univ.), Wenchang Yeh (Shimane Univ.)

14:45 〜 15:00

[E-7-04] Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization

^○Linyu Huang¹, Kenta Moto¹, Takamitsu Ishiyama², Kaoru Toko², Dong Wang¹, Keisuke Yamamoto¹ (1. Kyushu Univ. (Japan), 2. Univ. of Tsukuba (Japan))

https://doi.org/10.7567/SSDM.2023.E-7-04

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講演情報

[E-7] Advanced LTPS TFTs and related technologies

[E-7-04] Inversion Mode n-channel TFT on Polycrystalline Ge Formed by Solid-Phase Crystallization

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