Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge <sub>1-x</sub>Sn <sub>x</sub> Grown on Ge(100)

Rahmat Hadi SAPUTRO

doi:https://doi.org/10.7567/SSDM.2023.E-8-01

講演情報

Oral Presentation

10: Thin Film Electronics: Oxide / Non‐single Crystalline / Novel Process

[E-8] Group IV cyrstal growth and applications

2023年9月8日(金) 15:30 〜 16:15 Room E (223, Bldg. 2)

Session Chairs: Kenta Moto (Kyushu Univ.), Toshiya Murakami (KIOXIA)

15:30 〜 15:45

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)

^○Rahmat Hadi SAPUTRO^1,2, Tatsuro Maeda³, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan), 3. AIST (Japan))

https://doi.org/10.7567/SSDM.2023.E-8-01

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講演情報

[E-8] Group IV cyrstal growth and applications

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge 1-xSn x Grown on Ge(100)

パスワード

[E-8-01] Compressive Strain Dependence on the Photoluminescence of Epitaxial Ge _1-xSn _x Grown on Ge(100)