Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto

doi:https://doi.org/10.7567/SSDM.2023.F-1-01

Presentation information

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-1] Modeling, Simulation and Characterization

Wed. Sep 6, 2023 2:00 PM - 3:45 PM Room F (224, Bldg. 2)

Session Chairs: Satofumi Souma (Kobe Univ.), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

2:00 PM - 2:15 PM

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto¹, Makoto Miyamura¹, ^○Kazunori Funahashi¹, Munehiro Tada¹, Ken Uchida², Hiroki Ishikuro³ (1. NanoBridge Semiconductor, Inc. (Japan), 2. Univ. of Tokyo (Japan), 3. Keio Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.F-1-01

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[F-1] Modeling, Simulation and Characterization

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Password