Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto

doi:https://doi.org/10.7567/SSDM.2023.F-1-01

講演情報

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-1] Modeling, Simulation and Characterization

2023年9月6日(水) 14:00 〜 15:45 Room F (224, Bldg. 2)

Session Chairs: Satofumi Souma (Kobe Univ.), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

14:00 〜 14:15

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

Toshitsugu Sakamoto¹, Makoto Miyamura¹, ^○Kazunori Funahashi¹, Munehiro Tada¹, Ken Uchida², Hiroki Ishikuro³ (1. NanoBridge Semiconductor, Inc. (Japan), 2. Univ. of Tokyo (Japan), 3. Keio Univ. (Japan))

https://doi.org/10.7567/SSDM.2023.F-1-01

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講演情報

[F-1] Modeling, Simulation and Characterization

[F-1-01] Gate-Length Dependent Variability of nMOSFET at Cryogenic Temperatures

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