Assessment of Traps-induced Noise in FDSOI MOSFETs

Jinghan Xu

doi:https://doi.org/10.7567/SSDM.2023.F-1-06

講演情報

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-1] Modeling, Simulation and Characterization

2023年9月6日(水) 14:00 〜 15:45 Room F (224, Bldg. 2)

Session Chairs: Satofumi Souma (Kobe Univ.), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

15:15 〜 15:30

[F-1-06] Assessment of Traps-induced Noise in FDSOI MOSFETs

^○Jinghan Xu¹, Mengqi Fan¹, Zixuan Sun¹, Fei Liu¹, Xiaoyan Liu¹ (1. Peking University (China))

https://doi.org/10.7567/SSDM.2023.F-1-06

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講演情報

[F-1] Modeling, Simulation and Characterization

[F-1-06] Assessment of Traps-induced Noise in FDSOI MOSFETs

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