Relationship between Electron Velocity Overshoot and Quantum Confinement in Si Nanosheet Gate-All-Around Field-Effect Transistors

Junichi Hattori

doi:https://doi.org/10.7567/SSDM.2023.F-1-07

講演情報

Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-1] Modeling, Simulation and Characterization

2023年9月6日(水) 14:00 〜 15:45 Room F (224, Bldg. 2)

Session Chairs: Satofumi Souma (Kobe Univ.), Hidetoshi Oishi (Sony Semiconductor Solutions Corp.)

15:30 〜 15:45

[F-1-07 (Late News)] Relationship between Electron Velocity Overshoot and Quantum Confinement in Si Nanosheet Gate-All-Around Field-Effect Transistors

^○Junichi Hattori¹, Koichi Fukuda¹, Tsutomu Ikegami¹, Yoshihiro Hayashi¹ (1. AIST (Japan))

https://doi.org/10.7567/SSDM.2023.F-1-07

Abstract password authentication.
A password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

講演情報

[F-1] Modeling, Simulation and Characterization

[F-1-07 (Late News)] Relationship between Electron Velocity Overshoot and Quantum Confinement in Si Nanosheet Gate-All-Around Field-Effect Transistors

パスワード