Impact of the dielectric layer on Wake-up Effect of HZO-based Thin Films

Min Liao

doi:https://doi.org/10.7567/SSDM.2023.F-3-03

9:30 AM - 9:45 AM

[F-3-03] Impact of the dielectric layer on Wake-up Effect of HZO-based Thin Films

^○Min Liao¹, Junshuai Chai¹, Jinjuan Xiang², Kai Han³, Yanrong Wang⁴, Hao Xu¹, Xiaolei Wang¹, Jing Zhang⁴, Wenwu Wang¹ (1. Institute of Microelectronics Chinese Academy of Sciences (China), 2. Beijing Superstring Academy of Memory Tech. (China), 3. Weifang Univ. (China), 4. North China Univ.of Tech. (China))

https://doi.org/10.7567/SSDM.2023.F-3-03

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Presentation information

[F-3] Ferroelectric Devices

[F-3-03] Impact of the dielectric layer on Wake-up Effect of HZO-based Thin Films

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