2023 International Conference on Solid State Devices and Materials

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Oral Presentation

01: Advanced CMOS: Material Science / Process Engineering / Device Technology

[F-3] Ferroelectric Devices

2023年9月7日(木) 09:00 〜 10:00 Room F (224, Bldg. 2)

Session Chairs: Pin Su (NYCU), Shibun Tsuda (Renesas Electronics Corp.)

09:45 〜 10:00

[F-3-04] Improved Anti-fatigue and Fatigue Recovery Capability of the HfO 2-ZrO 2 Ferroelectric Capacitors with Superlattice Structure

○Mingshuang Kang1, Yue Peng1, Wenwu Xiao2, Yan Liu1, Genquan Han1,3, Yue Hao1 (1. Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University (China), 2. Xi'an UniIC Semiconductors Company Ltd. (China), 3. Hangzhou Institute of Technology, Xidian University, Hangzhou (China))

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