Moisture Barrier Properties of Microwave Plasma-Enhanced CVD Graphene Using Greenhouse Gases for Cu Metallization

Ploybussara Gomasang

doi:https://doi.org/10.7567/SSDM.2023.G-4-01

10:45 AM - 11:00 AM

[G-4-01 (Late News)] Moisture Barrier Properties of Microwave Plasma-Enhanced CVD Graphene Using Greenhouse Gases for Cu Metallization

^○Ploybussara Gomasang^1,4, Masayoshi Umeno², Kazuyoshi Ueno^3,4 (1. Dept. of Electrical Eng., Silpakorn Univ. (Thailand), 2. C’s Techno Inc. (Japan), 3. Dept. of Electronic Eng., Shibaura Inst. of Tech. (Japan), 4. Int'l Res. Center for Green Electronics, SIT (Japan))

https://doi.org/10.7567/SSDM.2023.G-4-01

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Presentation information

[G-4] Advanced Metallization II

[G-4-01 (Late News)] Moisture Barrier Properties of Microwave Plasma-Enhanced CVD Graphene Using Greenhouse Gases for Cu Metallization

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