Dielectric Breakdown of Low Temperature Deposited SiCN Layers

Lin Hou

doi:https://doi.org/10.7567/SSDM.2023.G-4-02

11:00 AM - 11:15 AM

[G-4-02] Dielectric Breakdown of Low Temperature Deposited SiCN Layers

Lin Hou¹, Venkat Sunil Kumar Channam², Alicja Lesniewska², Serena Lacovo², Shuo Kang², Joeri De Vos², Anne Jourdain², Gerald Beyer², Kristof Croes², Edward Walsby³, Kath Crook³, Igor Belov³, Yangyin Chen¹, Yan Li¹, Eric Beyne² (1. Western Digital (United States of America), 2. IMEC (Belgium), 3. SPTS (United States of America))

https://doi.org/10.7567/SSDM.2023.G-4-02

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[G-4] Advanced Metallization II

[G-4-02] Dielectric Breakdown of Low Temperature Deposited SiCN Layers

Password