Dielectric Breakdown of Low Temperature Deposited SiCN Layers

Lin Hou

doi:https://doi.org/10.7567/SSDM.2023.G-4-02

11:00 〜 11:15

[G-4-02] Dielectric Breakdown of Low Temperature Deposited SiCN Layers

Lin Hou¹, Venkat Sunil Kumar Channam², Alicja Lesniewska², Serena Lacovo², Shuo Kang², Joeri De Vos², Anne Jourdain², Gerald Beyer², Kristof Croes², Edward Walsby³, Kath Crook³, Igor Belov³, Yangyin Chen¹, Yan Li¹, Eric Beyne² (1. Western Digital (United States of America), 2. IMEC (Belgium), 3. SPTS (United States of America))

https://doi.org/10.7567/SSDM.2023.G-4-02

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講演情報

[G-4] Advanced Metallization II

[G-4-02] Dielectric Breakdown of Low Temperature Deposited SiCN Layers

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