Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

Hiroki Imabayashi

doi:https://doi.org/10.7567/SSDM.2023.G-4-05

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Oral Presentation

03: Interconnect / 3D Integrations / MEMS

[G-4] Advanced Metallization II

Thu. Sep 7, 2023 10:45 AM - 12:00 PM Room G (231, Bldg. 2)

Session Chairs: Xun Gu (ASM Japan), Takeo Minari (NIMS)

11:45 AM - 12:00 PM

[G-4-05] Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

^○Hiroki Imabayashi¹, Hitose Sawazaki¹, Haruto Yoshimura¹, Masashi Kato², Kenji Shiojima¹ (1. Univ. of Fukui (Japan), 2. Nagoya Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.G-4-05

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Presentation information

[G-4] Advanced Metallization II

[G-4-05] Photoelectrical Characterization of Heavily-doped p-SiC Schottky Contacts

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