Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

Bo- Jheng Shih

doi:https://doi.org/10.7567/SSDM.2023.G-5-04

10:00 AM - 10:15 AM

[G-5-04] Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

^○Bo- Jheng Shih^1,2, Yu-Ming Pan¹, Hao-Tung Chung¹, Nei-Chih Lin², Chih-Chao Yang², Po-Tsang Huang¹, Huang-Chung Cheng¹, Chang-Hong Shen², Jia-Min Shieh², Wen-Fa Wu², Kuan-Neng Chen¹, Chenming Hu^1,3 (1. Univ. of Yang Ming Chiao Tung (Taiwan), 2. Inst. of Taiwan Semiconductor Research (Taiwan), 3. Univ. of California, Berkeley (United States of America))

https://doi.org/10.7567/SSDM.2023.G-5-04

Abstract password authentication.
PA password is required to view abstracts. You can find the password in the "Advance Program".The "Advance Program" is handed out at the registration desk to registered participants.

Presentation information

[G-5] Heterogenous Integration for High Performance Computing; System, Material, Process and Chiplet I

[G-5-04] Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

Password