Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

Bo- Jheng Shih

doi:https://doi.org/10.7567/SSDM.2023.G-5-04

10:00 〜 10:15

[G-5-04] Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

^○Bo- Jheng Shih^1,2, Yu-Ming Pan¹, Hao-Tung Chung¹, Nei-Chih Lin², Chih-Chao Yang², Po-Tsang Huang¹, Huang-Chung Cheng¹, Chang-Hong Shen², Jia-Min Shieh², Wen-Fa Wu², Kuan-Neng Chen¹, Chenming Hu^1,3 (1. Univ. of Yang Ming Chiao Tung (Taiwan), 2. Inst. of Taiwan Semiconductor Research (Taiwan), 3. Univ. of California, Berkeley (United States of America))

https://doi.org/10.7567/SSDM.2023.G-5-04

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講演情報

[G-5] Heterogenous Integration for High Performance Computing; System, Material, Process and Chiplet I

[G-5-04] Middle-End of Line Si FinFETs Using Laser-Liquid-Phase-Epitaxy Technique for Monolithic 3DIC

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