2023 International Conference on Solid State Devices and Materials

講演情報

印刷

Oral Presentation

12: Advanced Circuits / Systems Interacting with Innovative Devices and Materials

[J-4] Circuit Reliability and Image Sensors

2023年9月7日(木) 10:45 〜 12:00 Room J (233, Bldg. 2)

Session Chairs: Takeshi Yoshida (Hiroshima Univ.), Keita Yasutomi (Shizuoka Univ.)

11:15 〜 11:30

[J-4-02] Total Ionizing Dose Effect by Gamma-ray Irradiation and Recovery Phenomenon by Applying High Gate Bias to Commercial SiC Power MOSFETs

○Masatoshi Mizushima1, Kazutoshi Kobayashi1, Jun Furuta1 (1. Kyoto Inst. of Tech. (Japan))

https://doi.org/10.7567/SSDM.2023.J-4-02

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