The Japan Society of Applied Physics

14:30 〜 14:45

[K-1-02] Understanding Memory Window of FeFETs under Coexistence of Charge Trapping and Ferroelectric Polarization: Violation of Linear Superposition

Kasidit Toprasertpong1,2, Mitsuru Takenaka1, Shinichi Takagi1 (1. Univ. of Tokyo (Japan), 2. Stanford U. (United States of America))

https://doi.org/10.7567/SSDM.2023.K-1-02

We examine the impact of charge trapping on the memory window reduction in FeFETs. Different from nonferroelectric FETs, the nonlinearity of ferroelectric polarization results in nonlinear relation between the trapped charge density Nt and Vth shift. It is confirmed that the memory window cannot be estimated by the linear superposition of the Vth shift by polarization and by charge trapping. We also provide a critical discussion of some misunderstanding about Nt-Vth relation that causes an incorrect estimation of Nt in FeFETs.