[K-3] CMOS and Memory Applications of Low Dimensional Materials

[K-3-02 (Invited)] Introducing 2D Materials in Magnetic Tunnel Junctions

^○Bruno Dlubak¹, Victor Zatko¹, Simon M.-M. Dubois^1,2, Marta Galbiati¹, Julian Peiro¹, Florian Godel¹, Maelis Piquemal-Banci¹, Regina Galceran¹, Cécile Carretero¹, Sophie Collin¹, Aymeric Vecchiola¹, Karim Bouzehouane¹, Stephane Xavier³, Bernard Servet³, Federico Panciera⁴, Gilles Patriarche⁴, Mauro Och⁵, Cecilia Mattevi⁵, Piran R Kidambi⁶, Robert S Weatherup⁷, Sabina Caneva⁷, John Robertson⁷, Stephan Hofmann⁷, Albert Fert¹, Frederic Petroff¹, Jean-Christophe Charlier², Marie-Blandine Martin¹, Pierre Seneor¹ (1. Unite Mixte de Physique CNRS-Thales, Universite Paris-Saclay (France), 2. Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (Belgium), 3. Thales Research and Technology, Palaiseau (France), 4. C2N, Université Paris-Saclay (France), 5. Department of Materials, Imperial College London (UK), 6.Vanderbilt University (United States of America), 7.Department of Engineering, University of Cambridge (UK))

https://doi.org/10.7567/SSDM.2023.K-3-02