Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

Masashi Oota

doi:https://doi.org/10.7567/SSDM.2023.K-4-03

11:45 〜 12:00

[K-4-03] Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

^○Masashi Oota¹, Toshiki Hamada¹, Minato Ito¹, Toshiki Mizuguchi¹, Hidetomo Kobayashi¹, Takanori Matsuzaki¹, Hiromi Sawai¹, Hitoshi Kunitake¹, Tatsuya Onuki¹, Hajime Kimura¹, Shunpei Yamazaki¹ (1. Semiconductor Energy Laboratory Co., Ltd. (Japan))

https://doi.org/10.7567/SSDM.2023.K-4-03

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講演情報

[K-4] Oxide Semiconductors for Logic and Memory

[K-4-03] Vertical-Channel Oxide Semiconductor FET with Off-State Leakage Current of 4.6 zA/μm

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