1:30 PM - 2:00 PM
[K-7-01 (Invited)] Innovative SOT-MRAM Structure Design and Device Fabrication
The novel bottom-pinned artificial antiferromagnetic SOT-MRAM device refers to its structure, where the SOT channel electrode is fabricated on top of the MTJ, in contrast to the conventional top-pinned SOT-MRAM device structure. This unique structure provides enhanced artificial antiferromagnetic thermal stability and follows a fabrication process similar to that of STT-MRAM devices. This article presents the operation of SOT-MRAM devices with sizes ranging from 50 to 150 nm, utilizing STT-assisted SOT switching for device operation, achieving operation speeds as fast as 100 ns.