Twin-bit Via RRAM with Unique Diode State in Cross-bar Arraysby Advanced CMOS Cu BEOL Process

YU-CHENG - LIN

doi:https://doi.org/10.7567/SSDM.2023.K-7-03

2:15 PM - 2:30 PM

[K-7-03] Twin-bit Via RRAM with Unique Diode State in Cross-bar Arraysby Advanced CMOS Cu BEOL Process

YU-CHENG - LIN¹, Yao-Hung Huang¹, ^○Kai-Ching Chuang¹, Yu-Der Chih², Jonathan Chang², Chrong-Jung Lin¹, Ya-Chin King¹ (1. Institute of Electronics Engineering, National Tsing Hua University (Taiwan), 2. Design Technology Platform (DTP), Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan (Taiwan))

https://doi.org/10.7567/SSDM.2023.K-7-03

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Presentation information

[K-7] MRAM, FeRAM, and ReRAM

[K-7-03] Twin-bit Via RRAM with Unique Diode State in Cross-bar Arraysby Advanced CMOS Cu BEOL Process

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