Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films

Laurent Grenouillet

doi:https://doi.org/10.7567/SSDM.2023.K-7-04

2:30 PM - 2:45 PM

[K-7-04] Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films

^○Laurent Grenouillet¹, Simon Martin¹, Julie Laguerre¹, Justine Barbot¹, Nicolas Vaxelaire¹, Pierre-Marie Deleuze¹, Olivier Renault¹, Rabah Kies¹, Catherine Carabasse¹, Pattamon Dezest¹, Francois Aussenac¹, Richard Souil¹, Olivier Billoint¹, Elisa Vianello¹, Wassim Hamouda², Nick Barrett², Fracois Andrieu¹, Jean Coignus¹ (1. CEA-Leti (France), 2. SPEC-CEA (France))

https://doi.org/10.7567/SSDM.2023.K-7-04

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Presentation information

[K-7] MRAM, FeRAM, and ReRAM

[K-7-04] Synergetic FeRAM/OxRAM memory array operation induced by oxygen vacancy interface engineering in Si:HfO2 ferroelectric films

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