Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

Johji Nishio

doi:https://doi.org/10.7567/SSDM.2023.M-1-01

講演情報

Oral Presentation

11: Advanced Materials: Synthesis / Crystal Growth / Characterization

[M-1] Wide Bandgap Materials

2023年9月6日(水) 14:00 〜 15:30 Room M (431, Bldg. 4)

Session Chairs: Shingo Ogawa (Toray Research Center, Inc.), Takuya Hoshi (NTT Device Technology Lab.)

14:00 〜 14:30

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

^○Johji Nishio¹, Chiharu Ota¹, Ryosuke Iijima¹ (1. Corporate R&D Center, Toshiba Corp. (Japan))

https://doi.org/10.7567/SSDM.2023.M-1-01

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講演情報

[M-1] Wide Bandgap Materials

[M-1-01 (Invited)] Effect of Basal Plane Dislocation Structure on 1SSF Expansion Rate in 4H-SiC

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